Samsung Ramps V-NAND Output to Nvidia as CMX Storage Demand Tops 100 Million TB Next Year
Samsung Electronics has begun mass shipments of its tenth-generation V-NAND to Nvidia and shifted 60% of its V-NAND production capacity to the ninth-generation product to meet surging storage demand from Nvidia’s upcoming Context Memory Storage system. Industry sources on July 20 reported that Samsung’s monthly V-NAND capacity exceeds 100,000 wafers, with yield rates for the ninth-generation flash rising above 80% to support stable production.
The production pivot addresses the storage requirements for Nvidia’s CMX, a data center server equipped with 576 solid-state drives and 9,600 TB of memory. Market estimates project NAND demand tied to the CMX architecture will surge from 35 million TB this year to more than 100 million TB next year. Samsung’s broader NAND output is forecast at approximately 250 million TB this year, with trial production already underway for its 500-layer-class next-generation flash.
From the sources (3 posts)
@jukan05Samsung–Nvidia Expand NAND Alliance as V10 Shipments Begin Samsung Electronics is expanding its alliance with Nvidia into NAND flash supply, building on existing partnerships in DRAM, high-bandwidth memory (HBM), and foundry services. Leve
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@jukan05“Nvidia’s CMX is equipped with 576 SSDs, providing a total storage capacity of 9,600 TB. Industry estimates suggest that NAND demand for CMX will surge from 35 million TB this year to more than 100 million TB next year.” Nvidia’s Rubin CMX