Samsung Passes 90% Yield in Testing for HBM4E Memory Chip
Samsung Electronics has advanced the reliability test yield for its HBM4E high bandwidth memory to above 90%, according to a Korean industry report citing the company's internal management briefing. The figure represents a sharp increase from the more than 70% yield rate Samsung stated it achieved earlier this week as the chip progressed from development to customer evaluation.
Industry analysts typically consider a yield rate of 80% or higher as mature, indicating that the manufacturing process has stabilized and is ready for mass production. Crossing this threshold suggests Samsung is on track for a smoother production ramp of the seventh-generation memory chip. Samsung began mass production of its previous generation HBM4 in February and shipped sample units of HBM4E to major customers in late May. The chip is scheduled to be integrated into Nvidia's Vera Rubin and Vera Rubin Ultra AI accelerators, launching in the second half of next year and in 2027, respectively.
From the sources (3 posts)
@harukaze5719"The reliability test yield for HBM4E has risen to a level above 70%."
@jukan05[Exclusive] Samsung Clears 70% Yield on HBM4E… All Out Push for HBM Supremacy Samsung Electronics, following the world's first mass production of sixth generation high bandwidth memory (HBM4), is now producing visible results in the develo
@photoncap[단독] 삼성, HBM4E 수율 9분 능선 넘겼다...HBM 초격차 총력전